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| SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (W) 0.007 @ VGS = 10 V ID (A) 60a D TrenchFETr Power MOSFET Plus Temperature Sensing Diode D New Low Thermal Resistance Package APPLICATIONS D Automotive D Industrial D D2PAK-5L T1 G T2 12345 D1 D2 S N-Channel MOSFET G D T1 S T2 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d _ Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit 75 "20 60a 60a 240 60a 60a 180 300c 3.75d -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientd Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 71833 S-20174--Rev. A, 18-Mar-02 www.vishay.com PCB Mountd Symbol RthJA RthJC Limit 40 0.5 Unit _C/W _ 1 SUM60N08-07T Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 25 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 25 A, TJ = 125_C VGS = 10 V, ID = 25 A, TJ = 175_C VFD1 Sense Forward Voltage Sense Diode Forward Voltage Increase Forward Transconductancea VFD2 DVF gfs IF = 50 mA IF = 25 mA From IF = 25 mA to IF = 50 mA VDS = 15 V, ID = 20 A 710 640 40 100 120 0.0054 0.007 0.010 0.013 770 700 100 S mV W 75 2 4 "100 1 50 500 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 35 V, RL = 0.6 W ID ] 60 A, VGEN = 10 V, RG = 2.5 W VDS = 35 V, VGS = 10 V, ID = 60 A VGS = 0 V, VDS = 25 V, f = 1 MHz 6500 920 400 110 30 30 15 130 75 120 20 200 115 180 ns 150 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 60 A, di/dt = 100 A/ms m IF = 60 A, VGS = 0 V 1.0 75 3.5 0.13 60 A 240 1.5 115 5 0.29 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71833 S-20174--Rev. A, 18-Mar-02 SUM60N08-07T New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 6 V 200 I D - Drain Current (A) I D - Drain Current (A) 160 200 Vishay Siliconix Transfer Characteristics 150 120 100 5V 80 TC = 125_C 40 25_C -55_C 50 4V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 250 TC = -55_C r DS(on) - On-Resistance ( W ) 200 g fs - Transconductance (S) 0.015 0.020 On-Resistance vs. Drain Current 150 25_C 125_C 0.010 VGS = 10 V 0.005 100 50 0 0 15 30 45 60 75 90 0.000 0 20 40 60 80 100 120 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 10000 Ciss 8000 C - Capacitance (pF) 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 VGS = 35 V ID = 60 A 6000 12 4000 8 2000 Coss Crss 4 0 0 15 30 45 60 75 0 0 50 100 150 200 VDS - Drain-to-Source Voltage (V) Document Number: 71833 S-20174--Rev. A, 18-Mar-02 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM60N08-07T Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 100 ID = 10 mA 94 V (BR)DSS (V) 0.8 1.0 Sense Diode Forward Voltage vs. Temperature ID = 50 mA 88 VF (V) 0.6 ID = 25 mA 0.4 82 76 0.2 70 -50 0.0 -25 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) TJ - Junction Temperature (_C) Sense Diode Forward Voltage 0.01 0.001 TJ = 150_C I F (A) 0.0001 TJ = 25_C 0.00001 0.000001 0 0.3 0.6 0.9 VF (V) www.vishay.com Document Number: 71833 S-20174--Rev. A, 18-Mar-02 1.2 1.5 4 SUM60N08-07T New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 75 1000 Vishay Siliconix Safe Operating Area 60 I D - Drain Current (A) I D - Drain Current (A) 100 Limited by rDS(on) 10 ms 100 ms 45 30 10 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 15 1 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 3 Document Number: 71833 S-20174--Rev. A, 18-Mar-02 www.vishay.com 5 |
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